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(R)
ST2310HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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s
s s s s
NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
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APPLICATIONS: s HORIZONTAL DEFLECTION FOR MONITOR 15" AND HIGH END TV DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1500 600 6 10 20 7 55 -65 to 150 150 Uni t V V V A A A W
o o
C C
February 2000
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THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 Min. Typ . Max. 1 1 Un it mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) V BE(s at) h F E Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time
IC = 7 A IC = 7 A IC = 1 A IC = 7 A IC = 6 A I B(o n) = 1.2 A L B = 0.4 H
IB = 1.75 A IB = 1.75 A V CE = 5 V V CE = 5 V fh = 64 KHz V BB(off ) = -2.5 V 25 6.5 2.3 380
3 1.1
V V
9.5 2.7 450 s ns
ts tf
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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Derating Curve DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses
Switching Time Inductive Load
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Reverse Biased SOA
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ISOWATT218 NARROW LEADS MECHANICAL DATA
DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80
MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3
MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 0.425 0.622
MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091
9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 4.6 3.5 3.7 0.138 0.819 0.752 0.898 1.594 0.191 0.797 0.083
0.354
0.181 0.146
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 m
P025C/B
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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